Reliability Tests
Reliability Tests

Items

Standard 

Application

Optical Microscope


Inspect sample appearance , die surface, crack, contamination, scratch,oxide layer defects ,etc.

X-RAY


Inspect bonding wires, die attach and lead framevoidetc.

*SAT

JEDEC J-STD-035-1999

Inspect delaminationpackage crackdie crack
 
void in resinpoor die attachmentetc.

JUNO TEST


Semiconductor parametric measurement of diode, transistor, MOS or Three-terminal regulator test.

*IV CURVE TRACER

GB/T 13973-2012

Semiconductor parametric measurement of MOS, BJT or ICs. Compared with good unit find  differences.

TDR


TDR is used to measure reflections and time delays of pulses injected into a transmission line. Failure point positioning, Impedance measurement, Open/short test.

DE-CAP


Remove the compound,

expose the die , to observe defect of die or wire bond 

PROBE TEST


Observe electrical parameter or characteristic curve of the die

Crater test


Removing top metal layer on pad area, then observed whether the underlay damage

ION MILLING SYSTEM


Mechanical polishing fine processing , tiny cracks and void (for other polishing method is  difficult),multilayer structure interface, resistance to grinding which it is easy damage.

Scanning Electron Microscopy


Plan view and cross sectional microstructure inspection for all kinds of samples  

Multilayer sample inspection and precise critical dimension measurement

EDX


Conduct qualitative and semi-quantitative analysis for specified microstructure , analysis elements on the sample surface.

RIE


Layer by layer checking/ inspection, such as etching residue, metal crack or broken, oxide defect and poor via connection

Contact Us |  Customer |  Legal
Copyright @ JCET  Group  Co., Ltd.
苏ICP备05082751号 32028102000607