JCET Boosts Medium and High Power Device Manufacturing, Focusing on Wide Bandgap Products


The global rise of new energy vehicles, photovoltaics, and energy storage facilities creates unprecedented opportunities for the wide bandgap (WBG) semiconductor industry, particularly silicon carbide (SiC) and gallium nitride (GaN) power devices. Focusing on long-termed innovation, JCET Group is expanding its high-density back-end manufacturing capacity for WBG semiconductor power devices. It is expected that the revenue of related products will double starting from 2024, while promoting the rapid growth of WBG semiconductor devices in the various applications.

SiC and GaN products outperform traditional silicon-based power devices with higher switching frequencies, increased current density, and superior temperature resistance, all while minimizing conduction and switching losses. However, they also come with inherent challenges like parasitic inductance, parasitic resistance, and EMI. Advanced packaging technology is now pivotal in addressing and mitigating these challenges.

JCET Group, in collaboration with its customers, has developed high-density integrated solutions combining multiple packaging technologies, such as the Kelvin Source structure and Flip Chip technology. This innovation effectively mitigates the impact of parasitic inductors. Additionally, the implementation of Clip and Ribbon bonding processes reduces parasitic resistance within the package, thereby enhancing power conversion efficiency.

Furthermore, the packaging's heat dissipation capacity directly influences power device stability and efficiency. By using technologies such as top-side cooling (TSC), JCET's solution lowers the thermal resistance of the device, improves heat conduction pathways, and significantly enhances overall heat dissipation capability. This enables WBG semiconductor devices to fully harness their material performance potential.

Multiple top-tier domestic and international WBG semiconductor companies have unveiled production capacity expansion initiatives. These developments offer significant opportunities for JCET Group's high-density, medium and high-power device manufacturing solutions. According to Yole, the global SiC power device market is projected to sustain a remarkable CAGR of over 30% from 2021 to 2027. JCET Group is proactively scaling up production capacity to cater to the growing demands of its global customers.

Mr. Owen Jin, General Manager of JCET Group's Industrial & Smart Applications BU, said,"JCET Group's high-density module solutions for WBG semiconductor devices have achieved promising results in both development and market application. We look forward to significant revenue growth in related businesses in the coming years."